GaN HEMT Epitaxial Wafer

Online, March 10, 2014 (Newswire.com) - 2" GaN HEMT Epitaxial Wafers

We offer 2" GaN HEMT Wafers, the structure is as follows:
Structure(from top to bottom):
*undoped GaN cap(2~3nm)
AlxGa1-xN (18~40nm)
AlN(buffer layer)
un-doped GaN(2~3um)
Sapphire substrate

* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.

AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

Layer ID Layer Name Material Al Content(%) Dopant Thickness(nm)
0 Substrate GaN or Sapphire ©l ©l ©l
1 Nucleation Layer Various,AlN 100 DID ©l
2 Buffer Layer GaN 0 NID 1800
3 Spacer AlN 100 NID 1
4 Schottky Barrier AlGaN 20 or 23 or 26 NID 21

2"AlGaN/GaN on sapphire

For specification of AlGaN/GaN on sapphire template, please contact our sales department: [email protected].

Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

Explanation of AlGaN/Al/GaN HEMTs:

Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched ЁC for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.

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Source:PAM-XIAMEN

If you need more information about GaN HEMT epitaxial waferЈ¬please visit our website:http://www.powerwaywafer.com, send us email at [email protected] or [email protected].