GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionization of III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is g

Ostendo and TDI, part of the Oxford Instruments Group, are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED structures