BRUTEā¢ Peroxide enables dry peroxide gas delivery for ALD Oxide Growth. RASIRC today released research results showing that anhydrous hydrogen peroxide gas enables a five-fold increase in surface hydroxyl density when compared to water in studies involving ALD nucleation on SiGe substrates. Hydroxyl density is an important factor in minimizing interfacial defects, increasing uniformity and improving next generation semiconductor device performance.
Read MoreCompany presents technical sessions and exhibits at AVS Symposium
RASIRC will showcase a family of new technologies at the AVS 62nd International Symposium & Exhibition. Hydrogen peroxide gas with and without water and recent data on hydrazine gas for processing next generation semiconductor materials will be covered in two oral presentations and an exhibit (booth #437).