Tagged next-generation-semiconductors

Press Release

RASIRC Methods for Safe and Stable Delivery of Hydrogen Peroxide Gas and Hydrazine Gas for ALD

 Company presents technical sessions and exhibits at AVS Symposium RASIRC will showcase a family of new technologies at the AVS 62nd International Symposium & Exhibition. Hydrogen peroxide gas with and without water and recent data on hydrazine gas for processing next generation semiconductor materials will be covered in two oral presentations and an exhibit (booth #437). Read More
Press Release

Hydrogen Peroxide Gas for Next Generation Semiconductor Processes

 RASIRC BRUTE™ Peroxide delivers water-free H2O2 to enable new ALD reactions. BRUTE Peroxide is the only commercially available technology that can deliver up to 99.9% H2O2 gas by volume. In comparison, traditional H2O2 vaporizers typically deliver less than 1% H2O2 gas by volume from standard H2O2 liquid source. High concentration H2O2 gas improves wafer coverage density over water by as much as three times, leading to better initial growth rates and fewer defects. Read More
Press Release

RASIRC Presents Test Results Showing Stable Delivery of Hydrogen Peroxide Gas With or Without Water

 RASIRC to present posters and exhibit (Booth #39) at 15th Int'l Conference on Atomic Layer Deposition & ALE Workshop. The companies will showcase hydrogen peroxide gas with or without water. Posters are entitled "In-Situ Monitoring of Hydrogen Peroxide Vapor Delivery Systems for ALD" and "Novel Hydrogen Peroxide Delivery Systems for Atomic Layer Cleaning and Etch". Read More